TS12N20CS single n-channel 4.5v specified microsurf? features 12a, 20v r ds(on) =3.9m ? at 4.5volts 12a, 20v qg =19.8nc at 4.5volts low profile package: less than 1mm height when mounted on pcb occupies only 1/3 the area of so-8 excellent thermal characteristics high power and current handling capability lead free solder balls available tsc - 1 - rev. 1 05/2003 description t aiwan semiconductor s new low cost, state of the art microsurf lateral mosfet process technology in chipscale bondwireless packaging minimizes pcb space and r ds(on) plus provides an ultra-low qg x r ds(on) figure of merit. pin configuration internal block diagram standard application microsurf for high frequency dc-dc converters patent pending ds d g s drain-source voltage 20 volt current i d 12 ampere bottom: bump side preliminary data sheet
- 2 - tsc rev. 1 05/2003 absolute maximum ratings t a =2 5? unless otherwise noted parameter symbol value unit drain-source voltage v dss 20 v gate-source voltage v gss +12 v drain current ?continuous i d 6a ?pulsed 25 a power dissipation (steady state) p d 2.2 w operating and storage junction temperature range t j, t stg - 55 to +150 ? thermal characteristics thermal resistance, junction-to-ambient r ja 56 ?/ w thermal resistance, junction-to-ball r jr 4.5 ?/ w thermal resistance, junction-to-case r jc 0.6 ?/ w characteristics symbol conditions min typ max unit drain-source breakdown voltage bv dss v gs =0v, i d = 250 a 20 -- -- v gate-body leakage i ggs v gs = 12v, v ds =0v -- -- ?50 na zero gate voltage drain current i dss tj=150?, v ds =20v, v gs =0v -- - - 250 ua drain to drain sense leakage i dds tj=150?, v ds =20v, v gs =0v -- - - 250 ua static drain-source on-resistance r ds(on) v gs = 4.5v, i d = 12a -- 3.9 -- m ? drain sense on-resistance r dsds(on) v gs = 4.5v, i d = 0.35a -- 137 -- m ? gate threshold voltage v gs(th) v ds =v gs , i d = 250ua -- 1.3 -- v t otal gate charge qg v ds =20v, v gs = 4.5v, i d = 12a -- 19.8 -- nc gate resistance rg v ds =0v, f =1mhz -- 0.4 -- ohms output capacitance coss v ds =20v, v gs =0v, f =1mhz -- 2.4 -- nf input capacitance ciss v ds =20v, v gs =0v, f =1mhz -- 320 -- pf reverse transfer capacitance crss v ds =20v, v gs =0v, f =1mhz -- tbd -- pf reverse recovery time trr if = 12a, di/dt =100a/us -- -- 40 ns source-drain diode tj=150? forward on-voltage v sd is= 12a, v gs =0v -- 0.75 -- v source-drain diode on-state drain current id(on) v gs =4.5v, v ds =1v 25 -- -- a a valanche energy uis eas single pulse 10us, v ds >bv dss 2.5 -- -- mj TS12N20CS electrical specifications t a =2 5? unless otherwise specified
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